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VMK 90-02T2
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
TO-240 AA Outline
min. typ. max.
g fs
C iss
V DS = 10 V; I D = 0.5 ? I D25 pulsed
60
9000 15000
S
pF
C oss
C rss
t d(on)
t r
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
1600
600
4500
1500
70
80
pF
pF
ns
ns
t d(off)
t f
R G = 1 W (External), resistive load
200
100
ns
ns
Dimensions in mm (1 mm = 0.0394")
Q g
380
450 nC
Q gs
Q gd
R thJC
R thJK
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
with heat transfer paste
70
190
110 nC
230 nC
0.33 K/W
0.53 K/W
d S
d A
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
12.7
9.6
50
mm
mm
m/s 2
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Symbol
Test Conditions
min. typ. max.
I S
I SM
V GS = 0 V
Repetitive; pulse width limited by T JM
83
330
A
A
V SD
t rr
I F = I S ; V GS = 0 V,
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
I F = I S , -di/dt = 100 A/ m s, V DS = 100 V, V GS = 0 V
1.0
400
1.2
750
V
ns
IXYS MOSFETs IXYS IGBTs rights reserved the following U.S.patents:
are covered by one of
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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